The global GaN Half-Bridge ICs market size is predicted to grow from US$ 174 million in 2025 to US$ 290 million in 2032; it is expected to grow at a CAGR of 7.7% from 2026 to 2032.

GaN (gallium nitride) half-bridge ICs are semiconductor devices used in power conversion and switching applications. They leverage the properties of gallium nitride (GaN) a material with superior efficiency, higher switching speeds, and lower resistance compared to traditional silicon-based components. GaN half-bridge ICs are particularly valuable in applications where high efficiency, compact size, and fast switching are needed, such as in power supplies, motor drives, and various types of electronic converters.

United States market for GaN Half-Bridge ICs is estimated to increase from US$ million in 2025 to US$ million by 2032, at a CAGR of % from 2026 through 2032.

China market for GaN Half-Bridge ICs is estimated to increase from US$ million in 2025 to US$ million by 2032, at a CAGR of % from 2026 through 2032.

Europe market for GaN Half-Bridge ICs is estimated to increase from US$ million in 2025 to US$ million by 2032, at a CAGR of % from 2026 through 2032.

Global key GaN Half-Bridge ICs players cover Infineon Technologies, STMicroelectronics, Texas Instruments, Transphorm, ON Semiconductor, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2025.

Infinity Market Research newest research report, the GaN Half-Bridge ICs Industry Forecast looks at past sales and reviews total world GaN Half-Bridge ICs sales in 2025, providing a comprehensive analysis by region and market sector of projected GaN Half-Bridge ICs sales for 2026 through 2032. With GaN Half-Bridge ICs sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Half-Bridge ICs industry.

This Insight Report provides a comprehensive analysis of the global GaN Half-Bridge ICs landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Half-Bridge ICs portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global GaN Half-Bridge ICs market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Half-Bridge ICs and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Half-Bridge ICs.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Half-Bridge ICs market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

    Discrete Type
    Multi-Chip Package Type

Segmentation by Application:

    Consumer Electronics
    Solar Energy
    Data Centers
    Electric Vehicles
    Others

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.

    Infineon Technologies
    STMicroelectronics
    Texas Instruments
    Transphorm
    ON Semiconductor
    ROHM
    Danxitech
    GaNpower Semiconductor
    Innoscience
    Navitas Semiconductor
    Novosns
    Tagore

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN Half-Bridge ICs market?
What factors are driving GaN Half-Bridge ICs market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do GaN Half-Bridge ICs market opportunities vary by end market size?
How does GaN Half-Bridge ICs break out by Type, by Application?