The global Silicon Carbide Manufacturing Equipment market size is predicted to grow from US$ 3207 million in 2025 to US$ 8035 million in 2032; it is expected to grow at a CAGR of 14.8% from 2026 to 2032.

SiC Semiconductor Manufacturing Equipment refers to the core toolsets required across the SiC value chainSiC substrate manufacturing, SiC epitaxy, and SiC device front-end processingwith the emphasis on tools that directly determine yield, reliability, and cost per cm. Compared with silicon, SiC processing imposes distinct equipment requirements driven by (i) a hard/brittle wafering and surface-finishing regime, and (ii) a device flow that typically depends on heated ion implantation, very high-temperature activation anneals, and robust plasma etching/ohmic-contact formation, making thermal budgets, chamber materials, particle control, and defect sensitivity materially more demanding.

The market can be framed around 10 core equipment categories: (1) SiC crystal growth (PVT) platforms engineered for long-cycle thermal-field stability (e.g., PVA TePla/CGS highlights PVT systems for SiC single crystals); (2) boule processing & wafering (orientation/end-face, slicing) to reduce kerf loss and increase wafers per boule (e.g., DISCOs KABRA laser ingot slicing applicable to SiC; Okamotos SiC ingot grinding/orientation workflow); (3) wafer surface finishing (grinding/lapping/DSP/CMP) to reach tight TTV/warp and nanometer-scale surfaces (e.g., EBARA CMP systems emphasize nano-level planarity and contamination/particle mitigation concepts); (4) cleaning & surface preparation (single-wafer/batch, megasonic, dry-in/dry-out) to manage particle sensitivity (e.g., SCREEN single-wafer cleaner product line); (5) metrology & defect inspection for substrates/epi/patterned wafersclosing feedback loops on BPDs/stacking faults and other SiC-relevant defects (e.g., KLA Candela for SiC-oriented inspection and classification); (6) SiC epitaxy (high-temperature CVD reactors) focused on low defectivity, thickness/doping uniformity, and output per m (e.g., AIXTRON G10-SiC for 150/200 mm; ASM PE2O8 positioned for yield/throughput/cost); (7) lithography & track (often mainstream silicon toolsets, but critical for trench/termination patterning); (8) plasma etch & ash/strip where SiC deep/trench etches demand high-density plasma with low damage and tight profile control (e.g., Oxford Instruments ICP-RIE tooling and SiC-focused etch content); (9) thin film deposition & metallization (CVD/ALD/PVD) for dielectrics/barriers/metals (Applied Materials summarizes PVD/CVD/ALD as core deposition technologies in semiconductor manufacturing); and (10) doping & thermal processing (implant/activation anneal/oxidation) that defines the SiC high-temperature window (Axcelis highlights high-temperature implant capability and Si/SiC flexibility; Nissin highlights high-temperature SiC implantation; centrotherm positions c.ACTIVATOR for up to 2000C anneals and c.OXIDATOR for SiC oxidation/anneal up to 1500C).

The equipment challenge in SiC is inherently cross-step coupled: upstream wafering/surface finishing must minimize damage layers and particles on a hard/brittle material; epitaxy must control defect propagation and doping/thickness uniformity that directly map into device blocking/leakage behavior; and device fabrication typically requires heated implantation followed by extreme-temperature activation anneals, while plasma etches (especially trenches/deep features) must balance rate, selectivity, and low-damage surfaces to avoid reliability penalties (interface traps, leakage, oxide integrity). Meanwhile, SiCs defect spectrum (e.g., BPDs, stacking faults) drives a stronger pull for inspection + classification + feedback earlier in the flow to reduce downstream scrap of high-value processed wafers.

The current industry posture is moving from materials bottleneck to manufacturing system competition, where tool value is measured by throughput yield repeatability cost-of-ownership rather than single-step capability. A second structural driver is the accelerating transition toward 200 mm SiC manufacturing, which triggers a new capex cycle across epitaxy, thermal, metrology, and cleaning. Public disclosures illustrate this clearly: Infineon explicitly references shifting SiC manufacturing to 200-mm wafers; ST announced a high-volume 200-mm SiC manufacturing facility in Catania; and Wolfspeed continues to position 200-mm materials/device scaling as central to its roadmap. On the equipment side, AIXTRONs G10-SiC shipment milestone explicitly ties demand to ramping 200-mm SiC epitaxy capacityhighlighting high-throughput epitaxy as a key expansion lever.

Looking forward, equipment growth is driven by (i) electrification and energy-efficiency demand from EV (incl. 800V architectures), renewables/storage, industrial power and grid, sustaining SiC capacity build-outs; (ii) the industry pivot from capacity to cost curve reduction, pushing tool roadmaps toward higher wafer output per m, longer stable runs, and deeper automation/SPC; and (iii) three practical battlefields for tool innovation: wafering/surface finishing (damage/kerf reduction), epitaxy (defectivity + throughput), and implant/anneal/oxidation/clean (high-temperature capability with ultra-low contamination). Along the chain, upstream consumables and critical parts (hot-zone materials, process gases/chemicals, chamber materials/coatings) increasingly co-evolve with tool design; midstream equipment suppliers differentiate via integrated process windows and service uptime; and downstream SiC substrate/epi/device makers require faster qualification loopsmaking joint development and platform standardization more common in the 200-mm era.

Infinity Market Research newest research report, the Silicon Carbide Manufacturing Equipment Industry Forecast looks at past sales and reviews total world Silicon Carbide Manufacturing Equipment sales in 2025, providing a comprehensive analysis by region and market sector of projected Silicon Carbide Manufacturing Equipment sales for 2026 through 2032. With Silicon Carbide Manufacturing Equipment sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Silicon Carbide Manufacturing Equipment industry.

This Insight Report provides a comprehensive analysis of the global Silicon Carbide Manufacturing Equipment landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Silicon Carbide Manufacturing Equipment portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global Silicon Carbide Manufacturing Equipment market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Silicon Carbide Manufacturing Equipment and breaks down the forecast by Wafer Size, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Silicon Carbide Manufacturing Equipment.

This report presents a comprehensive overview, market shares, and growth opportunities of Silicon Carbide Manufacturing Equipment market by product type, application, key manufacturers and key regions and countries.

Segmentation by Wafer Size:

150mm SiC Equipment

200mm SiC Equipment

Others

Segmentation by Device Type:

SiC MOSFET

SiC Diode

Others

Segmentation by Equipment Type:

SiC Epitaxy/HTCVD Equipment

SiC Thin-Film Deposition & Metallization

SiC Thermal Processing Equipment

SiC Thinning and CMP Equipment

SiC Plasma Etch & Ash/Strip

Wafer Cleaning & Surface Preparation

SiC Ion Implanters

Lithography & Track (Coater/Developer)

SiC Metrology and Inspection

Others

Segmentation by Application:

    SiC Substrate Manufacturing
    SiC Epitaxy Manufacturing
    SiC Device Manufacturing

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.

    Applied Materials
    KLA SPTS
    Lam
    Tel
    Axcelis
    Centrotherm
    ULVAC
    PVA TePla
    NAURA
    Kokusai
    SCREEN
    Sumitomo
    Nissin Ion
    Oxford Instruments
    ASML
    Nikon
    Canon
    AIXTRON
    ASM/LPE
    Accretech
    DISCO
    Okamoto
    Lasertec
    Advantest
    Teradyne
    Crystal Growth & Energy Equipment Inc.
    Hans Laser Technology Industry
    Beijing TSD Semiconductor Co., Ltd.
    Shenzhen Naso Tech
    Beijing U-Precision Tech
    AMIES Technology
    Gurui Semiconductor Equipment (Guangzhou)
    Angkun Vision (Beijing) Technology

Key Questions Addressed in this Report

What is the 10-year outlook for the global Silicon Carbide Manufacturing Equipment market?
What factors are driving Silicon Carbide Manufacturing Equipment market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Silicon Carbide Manufacturing Equipment market opportunities vary by end market size?
How does Silicon Carbide Manufacturing Equipment break out by Wafer Size, by Application?