The global Automobile SiC and GaN Power Devices market size is predicted to grow from US$ 3367 million in 2025 to US$ 13860 million in 2031; it is expected to grow at a CAGR of 26.6% from 2025 to 2031.

SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.

GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

This report studies the Automotive SiC Power Devices and GaN Power Devices.

SiC Power Devices are mainly used in Automotive Main Inverter, On-Board Chargers and DC/DC Converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.

GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. GaN power devices are currently mainly used in consumer electronics, such as mobile phone fast charging, adapters, etc. In the automotive, the entry point of GaN power devices is the on-board charger (OBC). Currently, the GaN power devices are dominated by Innoscience, Infineon (GaN Systems), Power Integrations, Inc., Navitas Semiconductor, Efficient Power Conversion Corporation (EPC), and Renesas Electronics (Transphorm), among which Innoscience is the worlds largest GaN power device manufacturer.

Infinity Market Research newest research report, the Automobile SiC and GaN Power Devices Industry Forecast looks at past sales and reviews total world Automobile SiC and GaN Power Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected Automobile SiC and GaN Power Devices sales for 2025 through 2031. With Automobile SiC and GaN Power Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automobile SiC and GaN Power Devices industry.

This Insight Report provides a comprehensive analysis of the global Automobile SiC and GaN Power Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automobile SiC and GaN Power Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global Automobile SiC and GaN Power Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automobile SiC and GaN Power Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automobile SiC and GaN Power Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of Automobile SiC and GaN Power Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

    SiC Power Devices
    GaN Power Devices

Segmentation by Application:

    Main Inverter
    EV On-Board Chargers
    DC/DC Converter
    Others

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.

    STMicroelectronics
    Infineon (GaN Systems)
    Wolfspeed
    Rohm
    onsemi
    NXP
    Innoscience
    BYD Semiconductor
    Microchip (Microsemi)
    Mitsubishi Electric (Vincotech)
    Semikron Danfoss
    Fuji Electric
    Toshiba
    Bosch
    Sanan Optoelectronics
    Littelfuse (IXYS)
    CETC 55
    WeEn Semiconductors
    BASiC Semiconductor
    SemiQ
    Diodes Incorporated
    SanRex
    Alpha & Omega Semiconductor
    United Nova Technology
    KEC Corporation
    PANJIT Group
    Nexperia
    Vishay Intertechnology
    Zhuzhou CRRC Times Electric
    China Resources Microelectronics Limited
    StarPower
    Yangzhou Yangjie Electronic Technology
    Guangdong AccoPower Semiconductor
    Changzhou Galaxy Century Microelectronics
    Hangzhou Silan Microelectronics
    Cissoid
    SK powertech
    InventChip Technology
    Hebei Sinopack Electronic Technology
    Oriental Semiconductor
    Jilin Sino-Microelectronics
    PN Junction Semiconductor (Hangzhou)

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automobile SiC and GaN Power Devices market?
What factors are driving Automobile SiC and GaN Power Devices market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Automobile SiC and GaN Power Devices market opportunities vary by end market size?
How does Automobile SiC and GaN Power Devices break out by Type, by Application?