The global Automotive GaN Devices market size is predicted to grow from US$ 33.5 million in 2025 to US$ 4779 million in 2031; it is expected to grow at a CAGR of 128.6% from 2025 to 2031.

Automotive GaN Devices are a class of high-performance power devices designed specifically for automotive applications that take advantage of the wide-band gap properties of gallium nitride materials to achieve greater energy efficiency and smaller size. These devices play a key role in electric and hybrid vehicles, especially in areas such as on-board chargers, inverters, DC-DC converters, and advanced driver assistance systems (ADAS). The high frequency and high efficiency characteristics of on-board gallium nitride semiconductors help improve vehicle performance, reduce energy consumption, and drive the development of vehicles in a greener and smarter direction.

United States market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for Automotive GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key Automotive GaN Devices players cover NXP Semiconductor, Infineon Technologies AG, Panasonic Automotive Systems Co., Ltd, Texas Instruments, Qorvo Inc, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

Infinity Market Research newest research report, the ?Automotive GaN Devices Industry Forecast? looks at past sales and reviews total world Automotive GaN Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected Automotive GaN Devices sales for 2025 through 2031. With Automotive GaN Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automotive GaN Devices industry.

This Insight Report provides a comprehensive analysis of the global Automotive GaN Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automotive GaN Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms? unique position in an accelerating global Automotive GaN Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automotive GaN Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automotive GaN Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of Automotive GaN Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

    Power Device
    Radio-frequency Device

Segmentation by Application:

    Car Charger
    Inverter
    Motor Drive
    Others

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.

    NXP Semiconductor
    Infineon Technologies AG
    Panasonic Automotive Systems Co., Ltd
    Texas Instruments
    Qorvo Inc
    OSRAM Opto Semiconductors GmbH
    ROHM Co., Ltd
    Efficient Power Conversion Corporation
    Renesas Electronics Corporation
    Toshiba Corporation
    MACOM Technology Solutions Holdings, Inc.
    Nexperia
    Soitec
    INNOSECCO(Zhuhai)Technology Co., Ltd

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive GaN Devices market?
What factors are driving Automotive GaN Devices market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Automotive GaN Devices market opportunities vary by end market size?
How does Automotive GaN Devices break out by Type, by Application?