According to this study, the global Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer market size will reach US$ 7441 million by 2031.

This report studies the Gallium Nitride (GaN) Semiconductor Devices and GaN Substrate Wafers.

GaN Semiconductor Devices include the GaN RF devices and GaN power devices.

GaN Substrate Wafers include the GaN on SiC wafers, GaN on Si wafers, GaN-on-Sapphire wafers, etc.

Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the worlds largest GaN power device manufacturer.

LPI (LP Information) newest research report, the Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer Industry Forecast looks at past sales and reviews total world Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer sales in 2024, providing a comprehensive analysis by region and market sector of projected Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer sales for 2025 through 2031. With Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer industry.

This Insight Report provides a comprehensive analysis of the global Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer.

This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride (GaN) Semiconductor Devices and Substrate Wafer market by product type, application, key players and key regions and countries.

Segmentation by Type:

    GaN RF Devices
    GaN Power Devices
    GaN Wafer

Segmentation by Application:

    Telecom Infrastructure
    Military & Defense
    Consumer Electronics
    Industrial
    Automotive & Mobility
    Energy
    Others

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the companys coverage, product portfolio, its market penetration.

    Infineon (GaN Systems)
    STMicroelectronics
    Texas Instruments
    onsemi
    Microchip Technology
    Rohm
    NXP Semiconductors
    Toshiba
    Innoscience
    Wolfspeed, Inc
    Renesas Electronics (Transphorm)
    Sumitomo Electric Device Innovations (SEDI) (SCIOCS)
    Alpha and Omega Semiconductor Limited (AOS)
    Nexperia
    Epistar Corp.
    Qorvo
    Navitas Semiconductor
    Power Integrations, Inc.
    Efficient Power Conversion Corporation (EPC)
    MACOM
    VisIC Technologies
    Cambridge GaN Devices (CGD)
    Wise Integration
    RFHIC Corporation
    Ampleon
    GaNext
    Chengdu DanXi Technology
    Southchip Semiconductor Technology
    Panasonic
    Toyoda Gosei
    NGK
    Mitsubishi Chemical
    Shin-Etsu Chemical
    Kyma Technologies
    China Resources Microelectronics Limited
    CorEnergy
    Dynax Semiconductor
    Sanan Optoelectronics
    Hangzhou Silan Microelectronics
    Guangdong ZIENER Technology
    Nuvoton Technology Corporation
    CETC 13
    CETC 55
    Qingdao Cohenius Microelectronics
    Youjia Technology (Suzhou) Co., Ltd
    Nanjing Xinkansen Technology
    GaNPower
    CloudSemi
    Shenzhen Taigao Technology
    Eta Research Ltd
    Goetsu Semiconductor Wuxi