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Infinity Market Research

Global GaN and SiC Power Semiconductor Market Growth 2025-2031


Nov 2025

Semiconductor and Electronics

Pages: 215

LPI37001

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The global GaN and SiC Power Semiconductor market size is predicted to grow from US$ 4669 million in 2025 to US$ 16360 million in 2031; it is expected to grow at a CAGR of 23.2% from 2025 to 2031.

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The impact of the latest U.S. tariff measures and the corresponding policy responses from countries worldwide on market competitiveness, regional economic performance, and supply chain configurations will be comprehensively evaluated in this report.


This report studies the GaN Power Devices and SiC Power Devices.


In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices.


Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices.


SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.


Silicon Carbide (SiC) devices are widely used in automotive, EV charging, industrial motor/drive, PV, energy storage, wind power, UPS, data center & server and rail transport, etc.


In automotive, SiC power devices are mainly used in automotive main inverter, on-board chargers (OBC) and DC/DC converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.


SiC Power Devices are mainly used in Automotive Main Inverter, On-Board Chargers and DC/DC Converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.


GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. GaN power devices are currently mainly used in consumer electronics, such as mobile phone fast charging, adapters, etc. In the automotive, the entry point of GaN power devices is the on-board charger (OBC). Currently, the GaN power devices are dominated by Innoscience, Infineon (GaN Systems), Power Integrations, Inc., Navitas Semiconductor, Efficient Power Conversion Corporation (EPC), and Renesas Electronics (Transphorm), among which Innoscience is the worlds largest GaN power device manufacturer.


Infinity Market Research newest research report, the GaN and SiC Power Semiconductor Industry Forecast looks at past sales and reviews total world GaN and SiC Power Semiconductor sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN and SiC Power Semiconductor sales for 2025 through 2031. With GaN and SiC Power Semiconductor sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN and SiC Power Semiconductor industry.


This Insight Report provides a comprehensive analysis of the global GaN and SiC Power Semiconductor landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN and SiC Power Semiconductor portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global GaN and SiC Power Semiconductor market.


This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN and SiC Power Semiconductor and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN and SiC Power Semiconductor.


This report presents a comprehensive overview, market shares, and growth opportunities of GaN and SiC Power Semiconductor market by product type, application, key manufacturers and key regions and countries.


Segmentation by Type:


    GaN Power Devices
    SiC Power Devices


Segmentation by Application:


    Automotive & Mobility
    EV Charging
    Consumer Electronics
    Industrial Motor/Drive
    PV, Energy Storage, Wind Power
    UPS, Data Center & Server
    Rail Transport
    Defense & Aerospace
    Others


This report also splits the market by region:


    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries


The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.


    STMicroelectronics
    Infineon (GaN Systems)
    Wolfspeed
    Rohm
    onsemi
    Sumitomo Electric Device Innovations (SEDI)
    Qorvo
    NXP
    Power Integrations, Inc.
    Navitas (GeneSiC)
    Efficient Power Conversion Corporation (EPC)
    Innoscience
    BYD Semiconductor
    Renesas Electronics (Transphorm)
    Microchip (Microsemi)
    Mitsubishi Electric (Vincotech)
    Semikron Danfoss
    Fuji Electric
    Toshiba
    Bosch
    Sanan Optoelectronics
    Littelfuse (IXYS)
    CETC 55
    WeEn Semiconductors
    BASiC Semiconductor
    SemiQ
    Diodes Incorporated
    SanRex
    Alpha & Omega Semiconductor
    United Nova Technology
    KEC Corporation
    PANJIT Group
    Nexperia
    Vishay Intertechnology
    Zhuzhou CRRC Times Electric
    China Resources Microelectronics Limited
    StarPower
    Yangzhou Yangjie Electronic Technology
    Guangdong AccoPower Semiconductor
    Changzhou Galaxy Century Microelectronics
    Hangzhou Silan Microelectronics
    Cissoid
    SK powertech
    InventChip Technology
    Hebei Sinopack Electronic Technology
    Oriental Semiconductor
    Jilin Sino-Microelectronics
    PN Junction Semiconductor (Hangzhou)


Key Questions Addressed in this Report


What is the 10-year outlook for the global GaN and SiC Power Semiconductor market?
What factors are driving GaN and SiC Power Semiconductor market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do GaN and SiC Power Semiconductor market opportunities vary by end market size?
How does GaN and SiC Power Semiconductor break out by Type, by Application?

GaN and SiC Power Semiconductor Market Scope

Report AttributeDetails
Market Size (Start Year)USD XX Million
Market Size (End Year)USD XX Million
Compound Annual Growth Rate (CAGR)USD XX Million
Forecast PeriodUSD XX Million
Base YearUSD XX Million
Historical DataUSD XX Million
Key PlayersUSD XX Million

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REPORT COVERAGE

Revenue forecast, Company Analysis, Industry landscape, Growth factors, and Trends

SEGMENT COVERED

By component, deployment, organization size, application, and industry.

REGIONAL SCOPE

North America, Europe, Asia Pacific, Middle East & Africa, South & Central America

COUNTRY SCOPE

Includes key countries across all major regions.


📘 Frequently Asked Questions

1. What is the market size of Global GaN and SiC Power Semiconductor Market?

Answer: The global GaN and SiC Power Semiconductor market size is predicted to grow from US$ 4669 million in 2025 to US$ 16360 million in 2031; it is expected to grow at a CAGR of 23.2% from 2025 to 2031.

2. Which regions are analyzed in the Global GaN and SiC Power Semiconductor Market report?

Answer: The Global GaN and SiC Power Semiconductor Market report covers major regions such as Europe, Middle East & Africa. Each region is analyzed for trends, opportunities, and market dynamics.

3. What methodology is used for forecasting of Global GaN and SiC Power Semiconductor Market?

Answer: The Global GaN and SiC Power Semiconductor Market report uses a mix of primary research, secondary data, and expert analysis to build its forecasts. Models include both qualitative and quantitative approaches.

4. Are emerging markets analyzed separately in the Global GaN and SiC Power Semiconductor Market?

Answer: Yes, the Global GaN and SiC Power Semiconductor Market report highlights high-growth emerging regions with dedicated insights. These include untapped opportunities, risks, and potential for expansion.

5. Does the report include competitive benchmarking of Global GaN and SiC Power Semiconductor Market?

Answer: Yes, Global GaN and SiC Power Semiconductor Market report compares major players based on revenue, product portfolio, innovation, and regional presence. This helps assess competitive positioning.

6. Can I access country-level data within the Global GaN and SiC Power Semiconductor Market report?

Answer: Yes, Global GaN and SiC Power Semiconductor Market report includes detailed data by country, especially for key markets. This allows for localized insights and decision-making.

7. Can I get customized insights or data from the Global GaN and SiC Power Semiconductor Market report?

Answer: Yes, we offer customization options to align with your specific business needs. You can request tailored sections or regional breakdowns.

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