The global RF GaN market size is predicted to grow from US$ 2192 million in 2025 to US$ 6076 million in 2031; it is expected to grow at a CAGR of 18.5% from 2025 to 2031.

The impact of the latest U.S. tariff measures and the corresponding policy responses from countries worldwide on market competitiveness, regional economic performance, and supply chain configurations will be comprehensively evaluated in this report.

Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.

Compared to traditional technologies, gallium nitride has proven to be a superior material for several applications in the radio frequency field, where reliability, efficiency and reduced absorption are essential requirements. During the manufacturing process, gallium nitride is usually grown, at temperatures above 1000 C, on a substrate composed of silicon carbide (SiC) in the case of RF applications, or of regular silicon in the case of power applications. Technology based on GaN-on-SiC is by far the most used, both because it combines the high-power density of gallium nitride with the low power losses of silicon carbide, and because it solves the issues related to thermal management and parasitic losses. GaN-on-Si technology, despite having a lower cost, entails worse thermal performances and higher losses of RF signal power.

Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the worlds largest GaN power device manufacturer.

Infinity Market Research newest research report, the RF GaN Industry Forecast looks at past sales and reviews total world RF GaN sales in 2024, providing a comprehensive analysis by region and market sector of projected RF GaN sales for 2025 through 2031. With RF GaN sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world RF GaN industry.

This Insight Report provides a comprehensive analysis of the global RF GaN landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on RF GaN portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms unique position in an accelerating global RF GaN market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for RF GaN and breaks down the forecast by Technology, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global RF GaN.

This report presents a comprehensive overview, market shares, and growth opportunities of RF GaN market by product type, application, key manufacturers and key regions and countries.

Segmentation by Technology:

GaN-On-SiC Technology

GaN-On-Silicon Technology

Segmentation by Application:

    Telecom Infrastructure
    Satellite
    Military, Defense & Aerospace
    Others

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the companys coverage, product portfolio, its market penetration.

    Sumitomo Electric Device Innovations (SEDI)
    MACOM (OMMIC)
    Qorvo
    NXP Semiconductors
    Mitsubishi Electric
    RFHIC Corporation
    Infineon
    Microchip Technology
    Toshiba
    Altum RF
    ReliaSat (Arralis)
    Skyworks
    SweGaN
    Analog Devices Inc
    Aethercomm
    Integra Technologies
    Mercury Systems
    Epistar Corp.
    Ampleon
    CETC 13
    CETC 55
    Dynax Semiconductor
    Sanan Optoelectronics
    Youjia Technology (Suzhou) Co., Ltd
    Shenzhen Taigao Technology
    Tagore Technology
    WAVICE Inc

Key Questions Addressed in this Report

What is the 10-year outlook for the global RF GaN market?
What factors are driving RF GaN market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do RF GaN market opportunities vary by end market size?
How does RF GaN break out by Technology, by Application?