The global Silicon Carbide Power Devices for Automobiles market size is predicted to grow from US$ 3023 million in 2025 to US$ 8792 million in 2031; it is expected to grow at a CAGR of 19.5% from 2025 to 2031.

This report studies silicon carbide (SiC) power devices for automotive, including SiC MOSFET Module, SiC MOSFET Discrete and SiC diode. In automotive, currently the silicon carbide (SiC) power devices are mainly used in main drive inverters, On-Board Chargers, and DC/DC converters, etc.

Automotive is the largest market of silicon carbide (SiC) power devices, driven by demand from China, UAS, EU, and Japan. China is one of the world?s largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

Infinity Market Research ' newest research report, the ?Silicon Carbide Power Devices for Automobiles Industry Forecast? looks at past sales and reviews total world Silicon Carbide Power Devices for Automobiles sales in 2024, providing a comprehensive analysis by region and market sector of projected Silicon Carbide Power Devices for Automobiles sales for 2025 through 2031. With Silicon Carbide Power Devices for Automobiles sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Silicon Carbide Power Devices for Automobiles industry.

This Insight Report provides a comprehensive analysis of the global Silicon Carbide Power Devices for Automobiles landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Silicon Carbide Power Devices for Automobiles portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms? unique position in an accelerating global Silicon Carbide Power Devices for Automobiles market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Silicon Carbide Power Devices for Automobiles and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Silicon Carbide Power Devices for Automobiles.

This report presents a comprehensive overview, market shares, and growth opportunities of Silicon Carbide Power Devices for Automobiles market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

    Automotive Grade SiC MOSFET Module
    Automotive Grade SiC MOSFET Discrete
    Automotive Grade SiC SBD

Segmentation by Application:

    Main Inverter
    EV On-Board Chargers
    DC/DC Converter

This report also splits the market by region:

    Americas
        United States
        Canada
        Mexico
        Brazil
    APAC
        China
        Japan
        Korea
        Southeast Asia
        India
        Australia
    Europe
        Germany
        France
        UK
        Italy
        Russia
    Middle East & Africa
        Egypt
        South Africa
        Israel
        Turkey
        GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.

    STMicroelectronics
    Infineon
    Wolfspeed
    Rohm
    onsemi
    BYD Semiconductor
    Microchip (Microsemi)
    Mitsubishi Electric (Vincotech)
    Semikron Danfoss
    Fuji Electric
    Navitas (GeneSiC)
    Toshiba
    Qorvo (UnitedSiC)
    San'an Optoelectronics
    Littelfuse (IXYS)
    CETC 55
    WeEn Semiconductors
    BASiC Semiconductor
    SemiQ
    Diodes Incorporated
    SanRex
    Alpha & Omega Semiconductor
    Bosch
    KEC Corporation
    PANJIT Group
    Nexperia
    Vishay Intertechnology
    Zhuzhou CRRC Times Electric
    China Resources Microelectronics Limited
    StarPower
    Yangzhou Yangjie Electronic Technology
    Guangdong AccoPower Semiconductor
    Changzhou Galaxy Century Microelectronics
    Hangzhou Silan Microelectronics
    Cissoid
    SK powertech
    InventChip Technology
    Hebei Sinopack Electronic Technology
    Oriental Semiconductor
    Jilin Sino-Microelectronics
    PN Junction Semiconductor (Hangzhou)

Key Questions Addressed in this Report

What is the 10-year outlook for the global Silicon Carbide Power Devices for Automobiles market?
What factors are driving Silicon Carbide Power Devices for Automobiles market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Silicon Carbide Power Devices for Automobiles market opportunities vary by end market size?
How does Silicon Carbide Power Devices for Automobiles break out by Type, by Application?